RESUMEN
Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the mainstream writing operation of MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an electric field is used instead. In this regard, strain-mediated multiferroic heterostructure composed of MTJ and ferroelectrics are promising with the advantages of room temperature and magnetic field-free as already demonstrated by MTJ with in-plane magnetic anisotropy. However, there is no such report on the perpendicular MTJs (p-MTJs), which have been commercialized. Here, we investigate electric-field control of resistance state of MgO-based p-MTJs in multiferroic heterostructures. A remarkable and nonvolatile manipulation of resistance is demonstrated at room temperature without magnetic field assistance. Through various characterizations and micromagnetic simulation, the manipulation mechanism is uncovered. Our work provides an effective avenue for manipulating p-MTJ resistance by electric fields and is notable for high density and ultralow power spintronic devices.
RESUMEN
Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.
RESUMEN
Neuromorphic computing has shown remarkable capabilities in silicon-based artificial intelligence, which can be optimized by using Mott materials for functional synaptic connections. However, the research efforts focus on two-terminal artificial synapses and envisioned the networks controlled by silicon-based circuits, which is difficult to develop and integrate. Here, we propose a dynamic network with laser-controlled conducting filaments based on electric field-induced local insulator-metal transition of vanadium dioxide. Quantum sensing is used to realize conductivity-sensitive imaging of conducting filament. We find that the location of filament formation is manipulated by focused laser, which is applicable to simulate the dynamical synaptic connections between the neurons. The ability to process signals with both long-term and short-term potentiation is further demonstrated with ~60 times on/off ratio while switching the pathways. This study opens the door to the development of dynamic network structures depending on easily controlled conduction pathways, mimicking the biological nervous systems.
RESUMEN
The accurate radio frequency (RF) ranging and localizing of objects has benefited the researches including autonomous driving, the Internet of Things, and manufacturing. Quantum receivers have been proposed to detect the radio signal with ability that can outperform conventional measurement. As one of the most promising candidates, solid spin shows superior robustness, high spatial resolution and miniaturization. However, challenges arise from the moderate response to a high frequency RF signal. Here, by exploiting the coherent interaction between quantum sensor and RF field, we demonstrate quantum enhanced radio detection and ranging. The RF magnetic sensitivity is improved by three orders to 21 [Formula: see text], based on nanoscale quantum sensing and RF focusing. Further enhancing the response of spins to the target's position through multi-photon excitation, a ranging accuracy of 16 µm is realized with a GHz RF signal. The results pave the way for exploring quantum enhanced radar and communications with solid spins.
RESUMEN
Focusing electromagnetic field to enhance the interaction with matter has been promoting researches and applications of nano electronics and photonics. Usually, the evanescent-wave coupling is adopted in various nano structures and materials to confine the electromagnetic field into a subwavelength space. Here, based on the direct coupling with confined electron oscillations in a nanowire, we demonstrate a tight localization of microwave field down to 10-6λ. A hybrid nanowire-bowtie antenna is further designed to focus the free-space microwave to this deep-subwavelength space. Detected by the nitrogen vacancy center in diamond, the field intensity and microwave-spin interaction strength are enhanced by 2.0 × 108 and 1.4 × 104 times, respectively. Such a high concentration of microwave field will further promote integrated quantum information processing, sensing and microwave photonics in a nanoscale system.
RESUMEN
Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations.
RESUMEN
Electric-field control of magnetism (EFCM) is very important for the exploration of high-density, fast, and nonvolatile random-access memory with ultralow energy consumption. Here, we report the electric-field-induced ferroelectric phase transitions in Pb(Mg1/3Nb2/3)0.82Ti0.18O3 (PMN-0.18PT) and symmetry breaking of EFCM behaviors for corresponding directions in multiferroic heterostructures composed of amorphous ferromagnetic Co40Fe40B20 (CoFeB) and PMN-0.18PT. We uncover a new mechanism behind the unusual phenomena, involving coupling between CoFeB and PMN-0.18PT via complex cooperation of electric-field-induced ferroelectric phase transitions, competition of different ferroelectric domains, and internal electric field in PMN-0.18PT. The deterministic EFCM with reversible and nonvolatile nature opens up a new avenue for exploring EFCM in multiferroic heterostructures and is also significant for applications.
RESUMEN
Electric-field control of magnetism in ferromagnetic/ferroelectric multiferroic heterostructures is a promising way to realize fast and nonvolatile random-access memory with high density and low-power consumption. An important issue that has not been solved is the magnetic responses to different types of ferroelectric-domain switching. Here, for the first time three types of magnetic responses are reported induced by different types of ferroelectric domain switching with in situ electric fields in the CoFeB mesoscopic discs grown on PMN-PT(001), including type I and type II attributed to 109°, 71°/180° ferroelectric domain switching, respectively, and type III attributed to a combined behavior of multiferroelectric domain switching. Rotation of the magnetic easy axis by 90° induced by 109° ferroelectric domain switching is also found. In addition, the unique variations of effective magnetic anisotropy field with electric field are explained by the different ferroelectric domain switching paths. The spatially resolved study of electric-field control of magnetism on the mesoscale not only enhances the understanding of the distinct magnetic responses to different ferroelectric domain switching and sheds light on the path of ferroelectric domain switching, but is also important for the realization of low-power consumption and high-speed magnetic random-access memory utilizing these materials.
RESUMEN
We report electric-field control of magnetism of (Co/Pt)3 multilayers involving perpendicular magnetic anisotropy with different Co-layer thicknesses grown on Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) FE substrates. For the first time, electric-field control of the interface magnetic anisotropy, which results in the spin reorientation transition, was demonstrated. The electric-field-induced changes of the bulk and interface magnetic anisotropies can be understood by considering the strain-induced change of magnetoelastic energy and weakening of Pt 5d-Co 3d hybridization, respectively. We also demonstrate the role of competition between the applied magnetic field and the electric field in determining the magnetization of the sample with the coexistence phase. Our results demonstrate electric-field control of magnetism by harnessing the strain-mediated coupling in multiferroic heterostructures with perpendicular magnetic anisotropy and are helpful for electric-field modulations of Dzyaloshinskii-Moriya interaction and Rashba effect at interfaces to engineer new functionalities.
